Abstract
Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5×10 15 to 2.5×10 15 cm −3, which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) method. New traps, e 1, e 2, e 3, e 4 and e 5, with activation energies of 0.22, 0.28, 0.37, 0.44 and 0.46 eV, respectively, were observed. Based upon the annealing behavior of traps and the calculated defect levels, traps e 1 and e 5 produced by the irradiation with electron doses above 1×10 15 cm −2 were linked to In P and P In antisite defects, respectively, that probably form complexes. Traps e 3 and e 4 produced by the irradiation with doses above 1×10 14 cm −2 were associated with In and P vacancy related defects, respectively.
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