Abstract
Three traps in p-type CdTe doped with Zn are found using the TSC (thermally stimulated current) method between 77 and 200 K. Their depths are estimated to be approximately 0.24, 0.25 and 0.40 eV. The TSC peak for the 0.24 eV trap is considerably quenched by the infrared rays. A quantitative analysis of the processes for the 0.24 eV trap is presented. It is proved that there are two different processes involved in the occupation of 0.40 eV trap at 77 K: one is a fast process and the other is slow. A model is proposed to explain qualitatively the complicated processes of the 0.40 eV trap.
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