Abstract
Thermally stimulated current measurement of neutron irradiated silicon detectors have been performed. Several energy levels have been observed, revealing in particular the presence of the vacancy-oxygen complex (A center) in its double configuration, the divacancy in single (V 2 −) and double (V 2 −−) minus charge state and the vacancy-phosphorous complex (E center). The increase of the leakage current of the irradiated diodes seems to be caused mainly by the presence of the E and V 2 − defects. The E centers give the main contribution to this effect, nearly 25 times higher than V 2 − one, while the current terms related to the other defects are almost irrelevant in the generation of the total leakage current of the device. A general agreement with leakage current constant measurements and annealing behaviours has been observed.
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