Abstract
We propose a new structure of InGaP/GaAs Hetero-junction Bipolar Transistor (HBT) with dual emitter fingers for power amplifier application, which is optimized for uniform thermal distribution within the device. The optimized thermal management of the proposed HBT relaxes the current decrease by a factor of 1.41 under active current bias, and prevents current gain collapse up to VCE of 8 V, while a conventional device shows a significant collapse at VCE=6.2 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
