Abstract
Significant improvement of the thermal stability in FeXN (X=Al, Zr, Ta,…) thin films is reported. Sputtered at the reduced target–substrate spacing of 38 mm, 200-nm-thick thermally stable FeXN thin films are obtained. They have hard-axis coercivity ≈ 0.1–2.0 Oe, easy-axis coercivity ≈1.5–3.0 Oe, Hk≈8–16 Oe, and Bs≈19–20 kG. Results of transverse-field annealing experiments in a uniform field of 700 Oe show no significant change of magnetic properties at 150 °C for 3 h. At 150 °C for 24 h Hk decreases by 2–4 Oe. Their easy/hard axes do not rotate and the coercivity remains almost unchanged. This superior thermal stability of FeXN films is very promising for high-moment write heads.
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