Abstract
The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80eV, which decreased to 0.7eV after annealing at 300°C, and to 0.6eV after additional annealing at 400°C in nitrogen for 20min. However, the barrier height remained at about 0.6eV even when the diodes were annealed at 600°C for 20min. The Rutherford backscattering spectra of annealed contacts showed no reaction at the ZrB2∕GaN interface. These results make ZrB2∕GaN Schottky contacts attractive for high temperature device applications.
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