Thermally stable Ar-implantation-induced intermixed quantum dot laser diode in high-temperature region

Abstract

Laser diodes (LDs) and other optical devices using quantum dots (QDs) are promising devices, as have already been reported. Compact and highly functional photonic integrated circuits (PICs) are desired to establish advanced photonic networks. Moreover, characteristics such as high temperature stability are essential if the PICs are integrated with large-scale integration (LSI), because the heat diffused from that causes the surrounding temperature to increase, which is detrimental to the operating conditions. We have investigated the QD intermixing (QDI) technique [1] to apply it to the fabrication of QD integrated PICs [2]. This is advantageous in that it is easy to fabricate PICs without any epitaxial re-growth. In this study, we found that the temperature stability of intermixed QD-LDs, fabricated using the Ar-implantation-induced QDI technique, could be improved, with a characteristic temperature (T0) greater than 570 K in the high temperature region.