Abstract

Thermally Oxidized Al<sub><i>x</i></sub>Ga<sub>2–<i>x</i></sub>O<sub>3</sub>/n-Al<sub>0.6</sub>Ga<sub>0.4</sub>N:Si Unipolar Resistive Random-Access Memory

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call