Abstract
The influence of postdeposition thermal treatment on the structural characteristics of vacuum deposited pentacene thin films was systematically investigated. With increasing annealing temperature, the film crystallinity decreased regularly and significantly, while structural analysis by using the paracrystal theory revealed an increased vertical coherent diffraction domain size. Influence of the structural evolution on the thin film transistor performance was demonstrated by a variable temperature structural and electrical characterization. The results indicate that a thermally induced structural evolution should be generally taken into account for understanding the charge transport nature of the materials.
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