Abstract
Inhomogeneous but symmetrical distribution of bulk stacking faults in Czochralski silicon crystals has been attributed to the corresponding distribution of self-interstitials, which greatly depends on the crystal growth conditions. The inhomogeneous distribution of self-interstitials is not affected by the shape of the solid-melt interface, which greatly affects growth striations. Consequently, it has been proved that silicon self-interstitials depress oxygen precipitation and the growth of surface oxide layer in silicon.
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