Abstract
Trapping and de-trapping of the acceptor-donor impurity pairs in semiconductors have been studied in crystalline silicon. The existence of such pairs in semiconductors are reported to have influence on the optical and electrical properties of materials. The perturbed γ - γ angular correlation (PAC) method is employed here to study such thermally induced dynamics of impurity complexes in the host lattice. The various types of pairs which are identified via the measured quadrupole interaction frequencies (QIF) showed distinct population of the complexes at different annealing temperatures. Efforts made to re-trap formed complexes after their dissociation by high sample temperatures produce positive results for some impurities.
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