Abstract
Dynamic switching of magnetization driven by subnanosecond voltage pulses would be a central technology for realizing ultralow-power magnetic random-access memory. For practical applications, however, there is a strong demand to reduce the write-error rate. This study shows that transitions of magnetization between different precession orbits, as induced by thermal fluctuations, play a dominant role in the probability of write error. The transitions can be avoided by choosing a proper width for the write voltage pulse. These findings will promote the development of voltage-driven spintronic devices.
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