Abstract
Photoluminescence due to thermally induced defects in Czochralski-grown (CZ) Si have been observed and correlated with the residual oxygen and carbon impurities involved in the crystal. In carbon-lean CZ-Si annealed around 450 °C, relatively broad luminescence lines associated with the thermal oxygen donors have been found. In contrast, many sharp luminescence lines originated from carbon-oxygen complexes come to appear in annealed carbon-rich CZ-Si. These sharp lines show the nature of recombination luminescence due to isoelectronic traps composed of the carbon-oxygen complexes.
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