Abstract
A strained single quantum well of GaAs/InxGa1−xGa/GaAs (x=0.23) has been grown by low pressure MOVPE on a (100) GaAs substrate at 625° C. Samples were annealed under AsH3/H2 at different temperatures in the range 750 to 900° C. Since the quantum well thickness (∼80 Å) is below the critical value for this lattice mismatched system, we assume that the InGaAs layer is commensurate with the GaAs substrate. We analyse the low temperature (2 K) photoluminescence of the electron to heavy hole transition in the quantum well of these samples to study the In/Ga interdiffusion at the InGaAs/GaAs interfaces. The position in energy of the photoluminescence peaks shift to higher energies when annealing. The shifts are quantitatively interpreted in terms of changes in the quantum well profile due to the In and Ga interdiffusion. We determined the interdiffusion coefficient at 850° C to be 3×10−17 cm2/s, with an activation energy 2.07 eV. The values obtained for the In/Ga interdiffusion coefficient are larger than those published for the Al and Ga interdiffusion in AlGaAs/GaAs heterojunctions.
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