Abstract
AbstractThe imprint characteristics of chemical solution deposited Pb(Zr,Ti)O3 (PZT) and SrBi2Ta2O9(SBT) thin films have been investigated. The imprint properties were evaluated by polarization-electric field hysteresis measurements. Imprint was measured at the elevated temperatures to accelerate imprint rate. Several parametric variables such as voltage and DC bias were also used to investigate possible imprint mechanisms. To quantify imprint, two different standards for evaluation of ferroelectric capacitors were compared: voltage shift and asymmetric polarization shift. Two types of PZT thin films with the same Zr/Ti composition were prepared to investigate the influence of loop shape on the rate of imprint. In addition, the imprint behavior of SBT was also investigated. It is shown that the imprint rate is strongly dependent upon the method of evaluation as well as the loop shape.
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