Abstract
The thermal stability of nanometric lanthanum aluminum oxynitride films on silicon was investigated in vacuum and oxygen. Isotopic enrichment of the films with 15 N and of the annealing atmosphere with 18 O combined with nuclear reaction analysis and Rutherford backscattering spectrometry provides direct evidence of atomic transport starting at 600°C. Oxygen exchange and nitrogen replacement are identified. Interfacial silicon oxide growth takes place as the interfacial N concentration falls below 5 X 10 21 cm -3 . Complementary X-ray photoelectron spectroscopy shows changes in chemical bonding as a function of annealing temperature and ambient.
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