Abstract
CdS thin films were deposited by vacuum thermal evaporation technique on Fluorine-doped Tin Oxide glass substrates at different substrate temperatures ranging from 50 to 250 °C. Post deposition heat-treated thin films were characterized for optical, structural, morphological and electrical properties to study the dependence substrate temperature. The optical bandgap was found in the range of 2.42–2.46 eV. Crystallite size, microstrain, phase distribution, and lattice parameters were calculated using x-ray diffractogram profile fit, Rietveld and Pawley refinement techniques. Best electrical properties of photoelectrochemical cells were observed for the films grown at a substrate temperature of 175 °C. CdS/CdTe full cells were fabricated using thermal evaporation technique and the highest efficiency of 3.76% and highest external quantum efficiency of 70% were observed for the CdS thin film grown at a substrate temperature of 175 °C and the variation was confirmed with SCAPS-1D simulation.
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