Abstract
Deep ultraviolet (UV) photons emitted from Cl2 plasmas become a critical cause of degradation in both photoluminescence (PL) properties and surface stoichiometry as a result of plasma-induced damage on GaN films in Cl2 plasma etching at high temperatures. The damages were formed thermally by photon-irradiations of plasma UV emissions with wavelengths of ∼258–306 nm from Cl2 plasma at temperatures greater than 500 °C. The damage were observed with a depth of approximately 3.2 nm. The PL property degraded by the UV emission-induced damage at an early period of plasma etching and reached a constant value.
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