Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd2O3 as gate dielectric

Abstract

The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical method. High dielectric constant rare earth oxide Nd2O3 has been used as gate insulator. The thin film trasistors are fabricated in coplanar electrode structure on ultrasonically cleaned glass substrates with a channel length of 50 μm. The thin film transistors exhibit a high mobility of 4.3 cm2 V−1 s−1 and low threshold voltage of 1 V. The ON-OFF ratio of the thin film transistors is found as 105. The TFTs also exhibit good transconductance and gain band-width product of 1.15 × 10−3 mho and 71 kHz respectively.