Abstract

With the recent commercialization of large-scale integration products, which include embedded magnetoresistive random-access memory, the importance of simulation models for MRAM circuits (MRAM compact models) has been continuously increasing. To accurately reproduce the characteristics of MRAM devices, the physical mechanism of the MRAM device including temperature dependency should be precisely described. In this study, we propose an MRAM compact model based on the Landau–Lifshitz–Bloch equation according to a previously developed model, which was based on the Landau–Lifshitz–Gilbert equation. Furthermore, we extend the model by considering interlayer interactions for handling multi-layered magnetic tunnel junction (MTJ) structures. We infer that circuits including MRAM devices, which consist of multi-layered MTJ structures having unique thermal characteristics, can be designed through SPICE simulations.

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