Abstract
II–VI compounds have attracted increasing attention, primarily because of the large range of energy band gaps available. ECR plasma etching of CdTe in a CCl 2F 2/Ar discharge with rf biasing were investigated at different temperature and different flow rate ratio. The etch rate increases with the increase in flow rate of reactive gas and temperature. The use of ECR conditions with additional rf biasing provides the good etching of the surface and fast etch rates. The etch depths were measured by Dektek profilometry and the surface morphology with scanning electron microscopy. This paper reports the thermal effect on the etch process of CdTe and the effect of various gas flow rates and ratio between CCl 2F 2 and Ar.
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