Abstract
New high purity glasses in the As 42S 58-Ga 42S 58 and As 40S 60-Ga 40S 60 systems were synthesised and the solubility regions of Ga 42S 58 and Ga 40S 60 in the As-S matrix were determined. Illumination of glassy powders and thin films shifts the short wavelength absorption edge, changes the optical gap, E g opt and changes their index of refraction, n. The sensitivity of Ga-containing films is higher than pure As-S. Annealing and illumination also changes the thickness of thin films, their density, the single oscillator energy, E o , dispersion energy, E d , of the Wemple-DiDomenico dispersion relationship and their Raman spectra. The changes in the Raman spectra are interpreted as photoinduced changes of short-range order in the structure of thin films. A microscopic model of the photoinduced changes is proposed.
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