Abstract
We report on a study of thermally activated flux creep in a ring-shaped epitaxial YBa 2Cu 3O 7− x film over a wide range of temperatures, using an experimental technique that allows us to obtain voltage–current ( V– I) characteristics of the sample at low voltages without electric contacts to the film. It is shown that in the temperature range between 10 and 60 K, the flux creep can be described in terms of a thermally activated hopping of vortices over potential barriers. Taking into account the temperature dependence of the critical current, all V– I characteristics in the above temperature range may be merged onto a single continuous curve, from which the current dependence of the activation energy for 0.4< I/ I c<0.9 may be established. Subsequently, this information allows us to reconstruct the profile of potential barriers in real space.
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