Abstract

A theoretical analysis on domain wall dynamics along thin ferromagnetic strips with high perpendicular magnetocrystalline anisotropy driven by both magnetic fields and spin-polarized currents is reported. The domain wall depinning from a constriction is characterized both at zero and at room temperature for different values of the nonadiabatic parameter. The results indicate that engineering of pinning sites in thin strips of high perpendicular anisotropy provides an efficient pathway to achieve both high stability against thermal fluctuations and low current-induced domain wall depinning and, therefore, it can find application on designing memory devices driven by static currents.

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