Abstract
ABSTRACTTime of flight (TOF) and thermally stimulated current (TSC) measurements were performed on poly(methylphenylsilane) (PMPS), poly(ethyl-p-methoxyphenylsilane) (PMeOPhEtS) and poly(ethylphenylsilane) (PEtPhS), to study the mechanism of interchain charge hopping transport. The value of the hole mobility at a given electric field and temperature varied with the substituent side groups. The activation energies, which were assigned to the hopping transport, ranged between 0.1-0.3eV and were dependent on the applied electric field. The nature of this dependence also varied with the substituent side groups. In the TSC spectra, a well defined current peak was observed in the temperature range between 100K-160K. The peak temperature was dependent both on the electric field and the heating rate. For a constant electric field and heating rate it was also dependent on the side groups, in a manner which was consistent with the results obtained by TOF. When the samples were exposed to high doses of UV radiation, a secondary peak at ∽180K was observed, which was attributed to surface defect sites produced by the UV exposure.
Published Version
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