Abstract

We are proposing a new active thermal-electronic device, the phonsistor (= phonon transistor). This device operates by means of thermal or hot electron coupling between adjacent domains containing metal-insulator transition (MIT) material. The MIT resistor itself has got thyristor-like I–V characteristics due to the high electric field and/or Joule heating and extremely strong step-like resistance drop at a given temperature. The phonsistor consists of only bulk type intrinsic domains, containing significantly fewer regions, junctions, depleted layers, surfaces and interfaces compared to conventional electron devices. Phonsistors can probably be integrated into thermal-electric integrated circuits (TELC).

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