Thermal‐Wave Imaging to Characterize the Formation of Titanium Disilicide on Monocrystalline, Poly‐, and Crystallized Amorphous Silicon Substrates

Abstract

In this paper we show the use of a nondestructive method, thermal‐wave imaging, for characterizing the formation of titanium disilicide. We indicate that it is possible to have information on its structure. The observation of thermal‐wave signals and images allows us to recognize the metastable C49 phase and the equilibrium C54 phase of the disilicide. The thermal‐wave topographic signals and images give information on the stability of the titanium disilicide after deposition and thermal annealing of low pressure chemical vapor deposition tetraethylorthosilicate oxide.