Thermal tuning capabilities of semiconductor metasurface resonators

Abstract

Abstract Metasurfaces exploit optical phase, amplitude, and polarization engineering at subwavelength dimensions to achieve unprecedented control of light. The realization of all dielectric metasurfaces has led to low-loss flat optical elements with functionalities that cannot be achieved with metal elements. However, to reach their ultimate potential, metasurfaces must move beyond static operation and incorporate active tunability and reconfigurable functions. The central challenge is achieving large tunability in subwavelength resonator elements, which requires large optical effects in response to external stimuli. Here we study the thermal tunability of high-index silicon and germanium semiconductor resonators over a large temperature range. We demonstrate thermal tuning of Mie resonances due to the normal positive thermo-optic effect (dn/dT>0) over a wide infrared range. We show that at higher temperatures and longer wavelengths, the sign of the thermo-optic coefficient is reversed, culminating in a negative induced index due to thermal excitation of free carriers. We also demonstrate the tuning of high-order Mie resonances by several linewidths with a temperature swing of ΔT<100 K. Finally, we exploit the large near-infrared thermo-optic coefficient in Si metasurfaces to realize optical switching and tunable metafilters.