Abstract
Abstract : We have measured the thermal conductivity of individual nanowires with engineered defects. The key emphasis is on studying how the phonon spectrum can be modified using defect engineering in 1D and 2D systems. Our work with nanowires suggests that strong localization of phonons is possible due to twin defects oriented perpendicular to the axis of nanowires. This results in the reduction of measured thermal conductivity by three orders of magnitude. As a result of the significant reduction in thermal conductivity the phonon contribution to thermal conductivity becomes comparable to the electronic contribution. A significant fraction of the electronic contribution to thermal conductivity can be tuned by an electrostatic gate - a realization of a thermal field effect transistor and analogue of the electrical FET.
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