Abstract
Terbium doped YAlO3 composites were fabricated by the co-precipitation method in a porous anodic alumina (PAA) films grown on silicon at three different Tb concentrations: 0.23, 0.87 and 2.11at.%. To investigate the emission thermal quenching for all samples, we measured the emission spectra as a function of temperature in the range from 10 up to 500K at 266 and 488nm excitation wavelengths. Based on obtained results we proposed the physical model explaining the mechanism of Tb3+ emission quenching in YAlO3 composites deposited into PAA film.
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