Abstract
The thermally induced stress in pulsed pump solid state lasers with super-Gaussian profile has been investigated. An analytical expression for the thermal stress is introduced. We consider the heat deposited in the crystal due to the pump. The temperature distribution in the crystal has been calculated by solving the non-steady state heat conduction equation. A Ti: Sapphire crystal is assumed pumped by a pulse laser. All the stress components have been obtained and discussed in details. The results show that the non-homogenous temperature distribution is induced by the thermal stress in the crystal.
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