Abstract
Spin transfer torque magnetic random access memory (STT-MRAM) has shown great potential in building future universal memory. However, the core of STT-MRAM, conventional perpendicular magnetization anisotropy (PMA) magnetic tunnel junction (MTJ) is facing challenges in keeping high thermal stability factor (ΔE), which is essential for reliable data storage. Despite solving the problem of ΔE, perpendicular shape anisotropy (PSA) MTJ still has drawbacks of slow STT switching and high breakdown risk. In this paper, we proposed a spin obit torque (SOT)-assisted-STT switching mechanism for PSA MTJ. A SIPCE model of PSA MTJ is developed. This model shows great agreements with experimental measurements. Besides, it is a very useful tool for circuit design and simulation. This model shows ΔE of PMA MTJ can be up to 70. Thanks to SOT-assisted-STT switching mechanism, the switching time can be greatly reduced. At last, simulations of non-volatile master flip-flop (NVMFF) circuit is performed to validate the device modeling.
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