Abstract
Spectroscopic ellipsometry was successfully applied in the evaluation of the thermal stability of thin films in air by detecting the changes in film optical properties and thickness. Tantalum nitride ( Ta x N y) films with a nominal thickness of 30 nm were deposited on silicon wafer and annealed at different temperatures from 200°C to 700°C. Annealing-induced changes in thickness and optical properties of Ta x N y were detected and determined by spectroscopic ellipsometry. Different approaches were adopted in the modeling and analysis of spectroscopic ellipsometric data. The results are consistent with the findings from Fourier Transform Infrared Spectroscopy (FTIR).
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