Abstract
Thermal stability of sputter deposited ZnO thin films was evaluated by thermal desorption spectroscopy (TDS). Desorption of Zn was mainly observed from the films deposited at low O 2/Ar gas ratio and low RF power. In contrast, O 2 desorption was mainly observed from the films deposited at high O 2/Ar gas ratio and high RF power. The amount of desorbed O 2 from the film increased with increasing the O 2/Ar gas flow ratio and the RF power. Furthermore, the desorption temperature of O 2 increased with increasing the RF power during the deposition. Thermal stability of the ZnO films was controlled not only by the O 2/Ar gas flow ratio, but also applied RF power to the target.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
