Abstract
The effect of high-temperature annealing on the optical properties of vertically coupled InAs quantum dots in a GaAs matrix and on the performance of a quantum-dot laser are studied. A strong blue shift of the photoluminescence peak and lasing line, as well as changes in the photoluminescence intensity and temperature dependence of the threshold current density are observed. The reason for this behavior is probably a reduction in the carrier localization energy due to a partial mixing of the In and Ga atoms as well as an improvement in the quality of the low-temperature grown Ga(Al)As layers achieved by high-temperature annealing.
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