Abstract
In this letter, the contact properties and thermal stability of TiN/Ti/p+ -Si0.3Ge0.7 contacts are investigated. We demonstrate that the insertion of an ultra-thin Ti interlayer is necessary to reduce the contact resistivity ( $\rho _{c}$ ) as compared with a standard TiN/p+-Si0.3Ge0.7 direct contact. However, the Ti interlayer has to be thin enough to avoid degradation of the contact morphology after 500 °C annealing. This letter reveals further that the Ti encroachment into grooved SiGe regions under the contact interface is responsible for the $\rho _{c}$ increase seen after this annealing.
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