Abstract
The work function stability of both Si(100) and Ge(100) surfaces activated with adsorptions of cesium and oxygen has been determined. In general, it has been found that the highest temperature the optimized Ge surface could be heated without an increase in its work function (1.06 eV) was ≈200°C whereas the optimized Si surface could be heated to ≈250°C without significant increase in the optimized work function (0.93 eV). Details are also presented on various characteristics of cesium and oxygen adsorption-desorption on these surfaces.
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