Abstract
The thermal stability is improved in a magnetic tunnel junction with a nano-oxide layer induced between the antiferromagnetic and pinned ferromagnetic layers, in which the annealing temperature is increased about 40℃. By using Rutherford backscattering spectroscopy, it has been found that the interdiffusion of Mn atoms, responsible for the decrease of TMR during the annealing process, is uppressed across such nano-oxide layer.
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