Thermal stability of silicon photovoltaic structures produced using compression plasma flows

Abstract

Thermal stability investigations of photovoltaic structures synthesized by the compression-plasma-flow treatment of doped silicon are performed. The samples are annealed in an atmosphere of nitrogen, in air or in vacuum in a temperature range of 100–900°C for 30 min or 3 h. The photovoltaic effect does not change after annealing at temperatures up to 600–700°C. It decreases 1.3–1.7 times after thermal annealing at a temperature of 900°C. The structure-phase changes of silicon treated with compression plasma flows are studied using X-ray diffraction and scanning electron microscopy methods. It is established that a recrystallized pre-surface layer with a thickness of 10–20 μm and modified (but not melted) layer with a thickness of up to 50–60 μm localized below the recrystallized layer are formed.