Thermal Stability of Semiconductor Nanocrystal Solids: Understanding Nanocrystal Sintering and Grain Growth

Abstract

Nanomaterials are naturally metastable with respect to bulk solids. This raises the very important fundamental problem of their morphological stability, especially when nanoscale crystallites are touching or nearly touching each other, such as in thin-film devices. In some cases, nanostructuring must be preserved under operational conditions (e.g., in quantum dot LEDs, lasers, photodetectors, and nanogranular thermoelectric devices). In other cases, we use nanocrystalline particles as precursors to a material with large crystalline grains and aim to sinter them as efficiently as possible (e.g., in polycrystalline thin-film solar cells). We carried out a systematic study of sintering and grain growth in materials composed of various sub-10 nm semiconductor grains. The boundaries between individual semiconductor grains have been chemically engineered using inorganic surface ligands. We found that the early stages of sintering and grain growth of nanocrystalline semiconductors are controlled by the ion mobility at the nanocrystal surfaces, while the late stages of grain growth are controlled by the mobility of the grain boundaries. This appears to be a general phenomenon for semiconductor nanocrystals, and it leads to several interesting and counterintuitive trends. For example, III–V InAs nanocrystals are generally much more resilient against sintering and grain growth compared to II–VI CdSe nanocrystals even though bulk CdSe has significantly higher melting point temperature than InAs (1268 °C vs 942 °C). Grain growth can be dramatically accelerated when coupled to solid−solid phase transitions. These findings expand our toolbox for rational design of nanocrystal materials for different applications.