Abstract
Thin films of neodymium aluminate (NdAlOx) have been deposited by liquid injection metalorganic chemical vapor deposition (MOCVD) using the bimetallic alkoxide precursor [NdAl(OPri)6(PriOH)]2. The effects of high‐temperature postdeposition annealing on NdAlOx thin films are reported. The as‐deposited thin films are amorphous in nature. X‐ray diffraction (XRD) and medium energy ion scattering (MEIS) show, respectively, no crystallization or interdiffusion of metal ions into the substrate after annealing at 950°C. The capacitance‐voltage (C-V) and current‐voltage (I-V) characteristics of the thin films exhibited good electrical integrity following annealing. The dielectric permittivity (κ) of the annealed NdAlOx was 12, and a density of interface states at flatband (Dit) of 4.01 × 1011 cm−2 eV−1 was measured. The deposited NdAlOx thin films are shown to be able to endure high‐temperature stress and capable of maintaining excellent dielectric properties.
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