Abstract
Both semiconductor and magnetic material properties are highly dependent on the environment temperature, and this is one of the critical obstacles limiting the application of these materials at high temperatures. In this work, a negative differential resistance-assisted anomalous Hall effect-based magnetic device has been fabricated and its thermal stability has been studied. The magnetic device was found quite stable and gave a reliable output current ratio of >104% in the temperature range of 0 °C–100 °C. The load-line analysis was performed to study the mechanism of thermal stability of this device in 0 °C–100 °C. It was found that the magnetic device exhibits improved thermal stability, with resistance variation in the range of 0 °C–100 °C being reduced by ∼40% compared to semiconductor-only devices. This study suggests that integrating magnetic and semiconductor properties together not only offer flexibility to integrate a number of applications in one simple device but also possible to provide thermal stability.
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