Abstract
Thermal stability of porous-silica-based low dielectric constant, k, material deposited by chemical vapor deposition has been investigated in a wide temperature range. The films as-deposited and after heat treatments up to 600°C have Si1O1.6C1.4H2.3 composition, permittivity k≈2.8, and porosity h≈0.25. A skeleton of silicon dioxide and empty pores justifies the permittivity and porosity values. Permeation experiments with deuterated water vapor indicate that pores are interconnected. At 700°C, the film has Si1O1.6C1.4H1.4 composition, k≈2.4, and h≈0.21. Bonds with lower polarizability could be responsible for the decrease of k. Above 800°C, carbon segregation and nanoclusters formation occur.
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