Abstract
Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460°C and V/III ratio of 2 are considerably affected by annealing at temperatures 600–650°C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480°C and V/III ratio to 4. InAsP/InGaAsP and InGaAs/InGaAsP laser diodes on GaAs substrates have been obtained by localized wafer fusion at 650°C.
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