Abstract
To investigate the thermal stability of graphene during sintering process of ceramic, the effect of temperature on stability of single-layer graphene (SLG) in argon atmosphere was studied. The Raman D-band/G-band intensity ratio(ID/IG) and the blue shifts of G mode showed that, the graphene defect density gradually increased with the increase in heat treatment temperature (HTT). There was limited damage in the graphene when treated temperature lower than 800 °C. The causes of the defects were discussed. The defect types were mainly on-set defects. Boundary defects were detected when the temperature reached above 800 °C. Atom Force Microscope (AFM) results showed that the defects gradually extended from the boundary and holes in the layer to the edge and ultimately led to isolated graphene islands. The experiment results could be useful to study the changes and developing the holistic performance of graphene in high temperature sintering process.
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