Abstract
We studied the thermal stability of Ge channel modulation doped structures fabricated by solid source molecular beam epitaxy utilizing low-temperature buffer technique. Drastic decrease of mobility and increase of carrier density was observed after annealing at temperature above 600°C. SIMS measurements indicated that this was not due to the B diffusion into Ge channel layers but the Si–Ge interdiffusion at the Ge/SiGe interface. In addition, it was found that the strain relaxation of Ge channel layers could occur after annealing at temperatures even below 500°C and cause the decreased mobility when the channel layers thickness were beyond equilibrium critical one.
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