Abstract
We have studied thermal stability of GdScO 3 and LaLuO 3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO 3 and GdScO 3 thin dielectric films by SIMS and capacitance–voltage ( C– V) measurements. In both GdScO 3 and LaLuO 3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C– V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO 3 and LaLuO 3 films, respectively. Furthermore we have observed that LaLuO 3 films exhibit C– V characteristics more stable to annealing conditions compared with GdScO 3 films.
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