Abstract
The results are presented indicating an increase in thermal stability, as well as structural and electrophysical properties of obtained by plasma-stimulated atomic layer deposition (PEALD) 20 nm ferroelectric HfO2, Hf0.5Zr0.5O2 films with the inserts of Al2O3 monolayers and without them, in metal-ferroelectric-silicon mesa structures, promising for universal memory devices.
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