Abstract
Carbon nitride (CN x ) thin films with high nitrogen content were deposited on Si (100) substrates by using electron cyclotron resonance nitrogen plasma assisted pulsed laser deposition (ECR-PLD), and their thermal stability were studied by examining their composition and bonding behaviors upon post-deposition heat annealing in vacuum and in nitrogen ambient. The as-deposited films contain nitrogen content varying around 50 at.% and are primarily amorphous containing several bonding configurations between carbon and nitrogen atoms with different bond components depending on bias voltage applied to the substrates. In addition to the D, G and L Raman bands reported for most CN x thin films, three prominent Raman peaks were observed at 170, 260 and 616 cm − 1 from our as-deposited films. Composition analysis by Rutherford backscattering spectroscopy measurement and chemical structure characterization by Fourier Transform infrared spectroscopy and Raman scattering measurements showed that the ECR-PLD deposited CN x thin films are quite stable upon annealing in vacuum up to 750 °C. The CN x films exhibit even higher thermal stability in nitrogen ambient.
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