Abstract
ABSTRACTThe investigations of thermal stability of a-SiNx:H films (x≤0.4) have xbeen performed bv both IR spectroscopy and DTA techniques. The properties of samples with x≤0.06 were attentively considered because in this case the nitrogen may be treated as an impurity in a-Si:H. It has been shown that controlled nitrogen doping (up to 0.5 Pa NH3) can be used as an effective technique for thermostabilization of a-Si:H properties.
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